Ion Implanting
Vacuum Solutions for Ion Implanting
Ion implantation is one of the key technologies and is used multiple times along the semiconductor manufacturing chain. During the ion implantation process silicon wafers are bombarded by a beam of electrically charged ions, called dopants. Most of todays tools are multi purpose tools to handle more than one process.
Implant energies reach up to 5 MeV to suit the todays 300 mm production requirements. Various implanter positions like source, beamline, analyzer magnet and load/lock require high vacuum in the range of 10-4 - 10-7 mbar, which his generated by turbo pumps. For load/lock applications the revolutionary OnTool BoosterTM can be the pump of choice.
Implant energies reach up to 5 MeV to suit the todays 300 mm production requirements. Various implanter positions like source, beamline, analyzer magnet and load/lock require high vacuum in the range of 10-4 - 10-7 mbar, which his generated by turbo pumps. For load/lock applications the revolutionary OnTool BoosterTM can be the pump of choice.
Main fields of application for our products are:
- Source
- Beamline
- Analyzer magnet
- Load/Lock
Our products are used for:
Vacuum generation
Vacuum measurement
Quantitative analysis
Leak detection

